Characterization of nanocrystalline cobalt doped TiO₂ sol―gel materialKIRIT, Siddhapara; DIMPLE, Shah.Journal of crystal growth. 2012, Vol 352, Num 1, pp 224-228, issn 0022-0248, 5 p.Conference Paper

Uniformity improvement of selectively-grown InGaAs micro-discs on SiSUGIYAMA, Masakazu; KONDO, Yoshiyuki; TAKENAKA, Mitsuru et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 229-234, issn 0022-0248, 6 p.Conference Paper

AlInN MOVPE: growth chemistry and analysis of trendsLOBANOVA, A. V; SEGAL, A. S; YAKOVLEV, E. V et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 199-202, issn 0022-0248, 4 p.Conference Paper

Growth and characterization of Hexakis(thiourea)nickel(II) nitrate crystalsMUTHU, K; MEENAKASHISUNDARAM, S. P.Journal of crystal growth. 2012, Vol 352, Num 1, pp 158-162, issn 0022-0248, 5 p.Conference Paper

Multiwafer zinc diffusion in an OMVPE reactorPITTS, O. J; BENYON, W; GOODCHILD, D et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 249-252, issn 0022-0248, 4 p.Conference Paper

Radial and axial impurity distribution in high-purity germanium crystalsGANG YANG; GUOJIAN WANG; WENCHANG XIANG et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 43-46, issn 0022-0248, 4 p.Conference Paper

Crystal growth and characterization of 9,10-diphenylanthraceneLOEF, Edgar V. Van; MUKHOPADHYAY, Sharmistha; ZAITSEVA, Natalia et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 103-105, issn 0022-0248, 3 p.Conference Paper

Imaging transport in nanowires using near-field detection of lightHAEGEL, N. M; CHISHOLM, D. J; COLE, R. A et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 218-223, issn 0022-0248, 6 p.Conference Paper

New single crystal scintillators: CsCaCl₃:Eu and CsCaI₃:EuZHURAVLEVA, Mariya; BLALOCK, Bonnie; KAN YANG et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 115-119, issn 0022-0248, 5 p.Conference Paper

2 inch diameter single crystal growth and scintillation properties of Ce:Gd₃Al₂Ga₃O₁₂KAMADA, Kei; YANAGIDA, Takayuki; ENDO, Takanori et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 88-90, issn 0022-0248, 3 p.Conference Paper

Impurity incorporation in orientation patterned GaAs grown by low pressure HVPESNURE, M; JIMENEZ, J; HORTELANO, V et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 258-261, issn 0022-0248, 4 p.Conference Paper

A comparison of the effect of Ca²⁺ codoping in cerium doped GSO with that of LSO and YSOKOSCHAN, M; YANG, K; ZHURAVLEVA, M et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 133-136, issn 0022-0248, 4 p.Conference Paper

Calcite growth-rate inhibition by fulvic acid and magnesium ion—Possible influence on biogenic calcite formationREDDY, Michael M.Journal of crystal growth. 2012, Vol 352, Num 1, pp 151-154, issn 0022-0248, 4 p.Conference Paper

On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the meltVANHELLEMONT, Jan.Journal of crystal growth. 2012, Vol 352, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

Progress in large area organometallic vapor phase epitaxy for III―V multijunction photovoltaicsFETZER, C. M; LIU, X. Q; CHANG, J et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 181-185, issn 0022-0248, 5 p.Conference Paper

Single crystal growth of Ga₂(Se_xTe_1―x)₃ semiconductors and defect studies via positron annihilation spectroscopyABDUL JABBAR, N. M; BOURRET-COURCHESNE, E. D; WIRTH, B. D et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 31-34, issn 0022-0248, 4 p.Conference Paper

Growth of Yb-doped Y₂O₃, Sc₂O₃, and Lu₂O₃ single crystals by the micro-pulling-down technique and their optical and scintillation characterizationFUKABORI, Akihiro; CHANI, Valery; KAMADA, Kei et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 124-128, issn 0022-0248, 5 p.Conference Paper

Morphological control of Mg_xZn_1―xO layers grown on Ga:ZnO/glass substrates for photovoltaicsZIQING DUAN; YICHENG LU; DU PASQUIER, Aurelien et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 190-193, issn 0022-0248, 4 p.Conference Paper

Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal―melt interface during the process of Czochralski silicon crystal growthTENG, Ying-Yang; CHEN, Jyh-Chen; HUANG, Cheng-Chuan et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 167-172, issn 0022-0248, 6 p.Conference Paper

VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fieldsFRANK-ROTSCH, Ch; JUDA, U; UBBENJANS, B et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 16-20, issn 0022-0248, 5 p.Conference Paper

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAsSCHULTE, Kevin L; RANCE, William L; REEDY, Robert C et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 253-257, issn 0022-0248, 5 p.Conference Paper

Dopant segregation in rare earth doped lutetium aluminum garnet single crystals grown by the micro-pulling down methodSUGIYAMA, Makoto; YOKOTA, Yuui; FUJIMOTO, Yutaka et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 110-114, issn 0022-0248, 5 p.Conference Paper

Effects of ionic radius control at Y site by Sc doping on crystal growth and physical properties for Ce:LiYF₄ single crystalsYOKOTA, Yuui; YANAGIDA, Takayuki; KAWACUCHI, Noriaki et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 95-98, issn 0022-0248, 4 p.Conference Paper

Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)TeCHOUBEY, A; VEERAMANI, P; PYM, A. T. G et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 120-123, issn 0022-0248, 4 p.Conference Paper

Growth mechanisms and defect structures of B₁₂As₂ epilayers grown on 4 H-SiC substratesYU ZHANG; HUI CHEN; YIMEI ZHU et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 3-8, issn 0022-0248, 6 p.Conference Paper